The DC/DC converter uses low on-resistance Si IGBTs or SiC MOSFETs to reduce conversion loss. The on-resistance has the characteristic to drop as the gate voltage rises so it is recommended to design a gate drive circuit using, for example, an Si IGBT with a high voltage of around 15V or an SiC MOSFET with a high voltage of around 18V.

LDO Regulator：

S-19213/4——For use in SiC MOSFET or Si IGBT gate driver circuits. The output voltage can be adjusted between 1.8 to 30V using an external resistor.

S-19212——For use in Si IGBT gate driver circuits. The output voltage can be set between 2.5 to 16V.

Voltage detector：

S-19115——Provides overvoltage monitoring. Built-in SENSE Pin reverse connection protection circuit. Current consumption of 0.6μA.

Watchdog Timer：

S-1951x——With reset and LDO regulator functions. Current consumption of 3.0μA.

Operational amplifier：

S-19630A——High-accuracy current detection. 36V operation, Rail-to-Rail input/output, low offset voltage of 50μV.